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| DATA SHEET DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES * Suitable for use as RF amplifier in VHF TV tuner. * Low Crss : 0.05 pF TYP. * High Gps : 23 dB TYP. * Low NF : 1.3 dB TYP. PACKAGE DIMENSIONS (Unit: mm) 0.4 -0.05 0.4 -0.05 0.4 -0.05 0.16 -0.06 +0.1 2.8 -0.3 1.5 2 +0.2 +0.1 +0.1 +0.2 -0.1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 20 V V V mA mW 0.6 -0.05 +0.1 5 5 25 200 125 5 0 to 0.1 55 to +125 C C +0.2 -3.1 1.1 0.8 5 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance SYMBOL BVDSX IDSS VG1S(OFF) VG2S(OFF) IG1SS IG2SS MIN. 20 7 10 25 TYP. MAX. UNIT V mA V V nA nA mS PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 4. Gate 1 TEST CONDITIONS VG1S = VG2S = 2 V, ID = 10 A VDS = 6 V, VG2S = 3 V, VG1S = 0 VDS = 8 V, VG2S = 0, ID = 5 A VDS = 8 V VG1S = 0, ID = 5 A VDS = 0, VG1S = 8 V, VG2S = 0 VDS = 0, VG2S = 8 V, VG1S = 0 VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 kHz 2.0 1.5 20 20 22 28 yfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure Ciss Coss Crss Cps NF 4.0 2.2 5.0 2.9 0.05 6.5 3.7 0.08 pF pF pF dB VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz 21 24 1.2 2.5 VDS = 10 V, VG2S = 5 V, ID = 10 mA f = 200 MHz dB IDSS classification V11 7-13 mA V12 11-19 mA V13 17-25 mA Document No. P12449EJ2V0DS00 (2nd edition) (Previous No. TC-1508) Date Published March 1997 N Printed in Japan (c) +0.1 8 8 1 4 (1.9) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) (1.8) 0.85 0.95 2.90.2 3 1983 3SK131 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 20 PT-Total Power Dissipation-mW DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VG2 = 3.0 V 400 ID-Drain Current-mA VG1S = 0 V -0.1 10 -0.2 -0.3 -0.4 -0.5 -0.6 300 200 100 0 25 50 75 100 Ta-Ambient Temperature-C 125 0 10 VDS-Drain to Source Voltage-V 20 DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE 20 2V 4V 3V FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE |yfs|-Forward Transfer Admitance-ms 5V VDS = 6 V 40 1V VG2S = 5 V 4V ID-Drain Current-mA 30 3V 20 10 1V 0 0V -1.0 0 VG1S-Gate 1 to Source Voltage-V 1.0 2V 10 VG2S = 0 -1.0 0 VG1S-Gate 1 to Source Voltage-V +1.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 30 |yfs|-Forward Transfer Admitance-ms Ciss-Input Capacitance-pF INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE VDS = 6.0 V f = 1 MHz 8.0 25 6.0 VG1S = 0.05 V 20 4.0 15 2.0 10 VDS = 6 V VG2 = 3 V f = 1.0 kHz 10 ID-Drain Current-mA 20 0 -1.0 0 1.0 2.0 3.0 VG2S-Gate 2 to Source Voltage-V 4.0 5 0 2 3SK131 OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 5.0 VDS = 6.0 V f = 1.0 MHz Coss-Output Capacitance-pF bis-Input Susceptance-mS INPUT ADMITTANCE (yis) vs. FREQUENCY 10 VDS2 = 6 V VG2S = 3 V ID = 10 mA 300 MHz 4.0 VG1S = 0 V 3.0 2.0 -0.5 V 5 200 MHz 1.0 100 MHz 0 -1.0 0 1.0 2.0 3.0 VG2S-Gate 2 to Source Voltage-V 4.0 0 1 gis-Input Conductance-mS 2 -5 bfs-Forward Trancfer Susceptance-mS FORWARD TRANSFER ADMITTANCE (yfs) vs. FREQUENCY gfs-Forward Transfer Conductance-mS 100 MHz 10 20 30 brs-Reverse Transfer Susceptance-mS 0 REVERSE TRANSFER ADMITTANCE (yrs) vs. FREQUENCY grs-Reverse Transfer Conductance-mS 0.1 0.2 VDS = 6 V VG2S = 3 V ID = 10 mA VDS = 6 V VG2S = 3 V ID = 10 mA 300 MHz -0.1 200 MHz -10 200 MHz 300 MHz -15 -0.2 100 MHz 5 OUTPUT ADMITTANCVE (yos) vs. FREQUENCY 300 MHz VDS = 6 V VG2S = 3 V ID = 10 mA Gps-Power Gain-dB POWER GAIN vs. DRAIN CURRENT 25 bos-Output Susceptance-mS 4 20 200 MHz 3 15 f = 200 MHz VDS = 10 V VG2S = 5 V VDS = 5 V VG2S = 3 V 2 100 MHz 1 10 5 0 0.5 gos-Output Conductance-mS 1.0 0 2 4 6 ID-Drain Current=mA 8 10 3 3SK131 NOISE FIGURE vs. DRAIN CURRENT f = 200 MHz VDS = 10 V VG2S = 5 V VDS = 5 V VG2S = 3 V NOISE FIGURE, POWER GAIN vs. GATE2 TO SOURCE VOLTAGE f = 200 MHz VDS = 10 V VDS = 5 V 30 Gps 4 NF-Noise Figure-dB 4.0 NF-Noise Figure-dB 3.0 Gps-Power Gain-dB 20 3 10 2 0 NF -10 1 2.0 1.0 0 2 4 6 ID-Drain Current=mA 8 10 -1 0 0 1 2 3 4 5 6 VG2S-Gate 2 to Source Voltage-V 7 8 TEST CIRCUIT VG2S 1000 pF 22 k 1000 pF TEST CONDITION VDS = 10 V, VG2S = 5 V, ID = 10 mA f = 200 MHz L1: 0.6 mm U.E.W. 7 mm 3T 7 pF OUTPUT L2: 0.6 mm U.E.W. 7 mm 3T L3: RFC 2.2 H 50 1000 pF 15 pF L3 22 k 1000 pF 1000 pF INPUT 50 7 pF L1 1000 pF 15 pF 200 1000 pF L2 VG1S VDS 4 3SK131 [MEMO] 5 3SK131 [MEMO] 6 3SK131 [MEMO] 7 3SK131 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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